研究目的
To demonstrate excellent emission uniformity with well-controlled strain by precise strain-engineering in GaN-on-Si LED epiwafers for micro LED applications, aiming to reduce cost and increase yield.
研究成果
The study successfully demonstrated excellent and reproducible emission uniformity on 200 mm GaN-on-Si LED epiwafers by precise strain-engineering, achieving all production relevant spec parameters simultaneously. This advancement opens the way to significantly reduce costs and enable high yield manufacturing in the micro LED supply chain.
研究不足
The study acknowledges that further improvement in emission uniformity is possible by sophisticated susceptor design and higher accuracy of its machining process. The deviation between actual and measured temperature due to temperature measurement accuracy issues indicates room for improvement in reproducibility.
1：Experimental Design and Method Selection:
The study involved growing GaN blue-LED structure on 200 mm diameter Si (111) substrate using a Veeco Propel single wafer MOCVD reactor. ALLOS’ proprietary buffer growth technology with several interlayers was used to grow a
2：5 μm-thick GaN layer without cracks. Sample Selection and Data Sources:
The samples were GaN-on-Si LED epiwafers. Data was collected through photoluminescence (PL) mapping and curvature measurements.
3：List of Experimental Equipment and Materials:
Veeco Propel single wafer MOCVD reactor, GaN-on-Si LED epiwafers.
4：Experimental Procedures and Operational Workflow:
The process included precise strain-engineering during epitaxial growth, control of wafer bow shape during MQW growth, and reproducibility checks.
5：Data Analysis Methods:
Emission wavelength uniformity and standard deviation were analyzed from PL mapping data.
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