研究目的
To develop a novel contact-free measuring method for monitoring the Thermal Laser Separation (TLS) process, enabling in situ detection of TLS-cracks and ensuring high yield in semiconductor wafer dicing.
研究成果
The presented method allows in situ detection of TLS-cracks, enabling process monitoring and potential reworking. Further work is needed to adapt the system for higher throughput and improved contrast values at wide wafer stripes.
研究不足
The method requires adaptation for different materials and scribe line widths. The current setup's feed rate is lower than typical TLS feed rates, and the contrast value varies with wafer stripe size.
1：Experimental Design and Method Selection:
The method involves heating the semiconductor wafer with an NIR laser and analyzing temperature gradients with contact-less temperature measurement to detect TLS-cracks.
2：Sample Selection and Data Sources:
Silicon carbide wafers with specific characteristics were used.
3：List of Experimental Equipment and Materials:
NIR laser (1070 nm wavelength, 200 W power), infrared camera (PI 400, Optris GmbH), and Matlab for image processing.
4：Experimental Procedures and Operational Workflow:
The wafer is heated locally with an NIR laser, and the thermal images are recorded and processed to evaluate the TLS-crack.
5：Data Analysis Methods:
Thermal images were analyzed using a contrast value (Michelson contrast) to evaluate the presence and quality of TLS-cracks.
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