研究目的
Investigating the performance of p-GaN/AlGaN/GaN heterostructure photodetectors for high-sensitivity UV detection.
研究成果
The p-GaN/AlGaN/GaN heterostructure photodetectors demonstrated superior performance with high responsivity, high photo-to-dark current ratio, and large UV/visible rejection ratio, indicating their potential for high-sensitivity UV detection applications.
研究不足
The study does not discuss the long-term stability or scalability of the photodetectors. Additionally, the fabrication process requires precise control, which may limit reproducibility.
1：Experimental Design and Method Selection:
The study focuses on the fabrication and characterization of p-GaN/AlGaN/GaN heterostructure photodetectors. The methodology includes the careful control of the p-GaN etching process to minimize leakage current and access resistance.
2：Sample Selection and Data Sources:
The epilayers consist of a 70-nm p-GaN cap, a 10-nm Al
3：2Ga8N barrier, a 400-nm i-GaN, and a 5-μm buffer. List of Experimental Equipment and Materials:
Alloyed Ti/Al/Ni/Au metal stacks for Ohmic contacts, SiO2 for passivation, and fluorine ion implantation for isolation.
4：Experimental Procedures and Operational Workflow:
The process includes p-GaN removal, Ohmic contact deposition, passivation, isolation, and contact hole opening.
5：Data Analysis Methods:
The performance of the photodetectors was evaluated based on responsivity, photo-to-dark current ratio, and UV/visible rejection ratio.
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