研究目的
To overcome the narrow-band and the 4-layers output restrictions, and extend the practical use of increased height ESIWs beyond narrow-band filters by presenting a novel wideband transition from microstrip to an increased height ESIW with an arbitrary number of layers.
研究成果
A novel wideband transition for increased-height ESIWs has been successfully designed, fabricated, and tested, showing good performance across the whole useful bandwidth of the ESIW. This transition allows for the integration of wideband devices and can be scaled to different frequency bands.
研究不足
The transition's performance is limited by the first part of the transition, which affects the return loss. The design requires careful optimization to achieve desired performance across the bandwidth.
1：Experimental Design and Method Selection:
The transition is designed based on an equivalent transformer in classical rectangular waveguide, with input and output waveguides of the same height as the input and output ESIWs. Intermediate steps are replaced by waveguides with non-rectangular cross-sections to achieve the required impedance.
2：Sample Selection and Data Sources:
A set of transitions with different heights of the output waveguide are designed to operate at Ka-band, implemented using a Rogers 4003C substrate.
3：List of Experimental Equipment and Materials:
Rogers 4003C substrate, FR-4 cover layers, and metallization for enclosing the device.
4：Experimental Procedures and Operational Workflow:
The transition is composed of a microstrip to ESIW transition and a quarter-wavelength transformer. The design involves optimizing parameters to minimize the reflection coefficient.
5：Data Analysis Methods:
The scattering parameters of the transformers are simulated and measured to evaluate performance.
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