1：Experimental Design and Method Selection:

The study employed various compensated lights (405 nm, 532 nm, 638 nm, and 808 nm) to determine key current mismatched ratios (CMMR) of InGaP-InGaAs-Ge related triple-junction (3J) solar cells. The methodology involved irradiating the solar cells under AM 1.5G simulated light and measuring the short-circuit currents of the subcells.

2：5G simulated light and measuring the short-circuit currents of the subcells. Sample Selection and Data Sources:

2. Sample Selection and Data Sources: Commercially available InGaP-InGaAs-Ge structures were used to fabricate 3J and double junction (2J) solar cells. The 2J solar cells were fabricated with an InGaP-based filter to evaluate the same absorption spectrum as the 3J solar cells.

3：List of Experimental Equipment and Materials:

The measurement system included a solar simulator with a Xe lamp (XEC-310S), Keithley 2400 5A for I-V measurements, and Keithley 2440 5A to control the compensated light sources. The solar cells were fabricated using AuGeNi and AuZn as front and bottom Ohmic electrodes, respectively.

4：Experimental Procedures and Operational Workflow:

The solar cells were irradiated under AM 1.5G condition with various compensated lights. The I-V characteristics were measured, and the short-circuit currents of the subcells were determined based on the response to the compensated lights.

5：5G condition with various compensated lights. The I-V characteristics were measured, and the short-circuit currents of the subcells were determined based on the response to the compensated lights. Data Analysis Methods:

5. Data Analysis Methods: The quantum efficiency of the solar cells was calculated based on the photocurrent generated by the compensated lights. The current mismatched ratio (CMMR) was defined and calculated to evaluate the performance of the solar cells.