研究目的
Investigating the effects of two-step annealing on nickel oxide (NiOx) films for enhancing the NiOx–perovskite interface in high-performance ambient-stable p–i–n perovskite solar cells.
研究成果
The two-step annealing process significantly improved the conductivity and work function of NiOx films, leading to enhanced performance of perovskite solar cells. The champion device achieved a PCE of 19.04%, with excellent air-stability, retaining 97% of its initial performance after 672 hours in ambient conditions.
研究不足
The study focused on the optimization of NiOx films through two-step annealing but did not explore the scalability of the process for industrial applications. The long-term stability beyond 672 hours was not investigated.
1：Experimental Design and Method Selection:
The study involved the preparation of NiOx films through a two-step annealing process and their application in perovskite solar cells (PSCs). The methodology included spin-coating a precursor solution and thermal annealing under various conditions.
2：Sample Selection and Data Sources:
ITO-coated glass substrates were used as the base for NiOx film deposition. The samples were characterized using X-ray photoelectron spectroscopy (XPS), UV–Vis spectroscopy, photoluminescence (PL) spectroscopy, conductivity measurements, transmission electron microscopy (TEM), and ultraviolet photoelectron spectroscopy (UPS).
3：List of Experimental Equipment and Materials:
Instruments included a spin-coater for film deposition, a thermal annealing oven, XPS, UV–Vis spectrometer, PL spectrometer, four-probe detector for conductivity measurements, TEM, and UPS.
4：Experimental Procedures and Operational Workflow:
The NiOx films were deposited on ITO substrates, annealed under two-step conditions, and then characterized. Perovskite layers were spin-coated on the NiOx films, and the devices were completed with additional layers and electrodes.
5：Data Analysis Methods:
The data were analyzed to determine the structural and chemical composition changes in NiOx, the optoelectronic properties of the films, and the performance of the PSCs.
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