研究目的
Investigating the integration of metasurface with uncooled infrared (IR) silicon germanium oxide (Si-Ge-O) microbolometers for Long Wavelength Infrared (LWIR) detection to improve IR absorptance and electrical performance.
研究成果
The integration of metasurface with Si-Ge-O microbolometers significantly improves IR absorptance and electrical performance, including increased TCR and reduced resistivity. Vacuum annealing effectively reduces noise, enhancing the device's responsivity and detectivity. These findings suggest promising applications in uncooled thermal imaging.
研究不足
The study focuses on a specific pixel size (40×40 μm2) and material composition (Si-Ge-O), which may limit the generalizability of the findings to other sizes or materials. The noise reduction through vacuum annealing requires precise control and may not be easily scalable.
1：Experimental Design and Method Selection:
The study involves the design and fabrication of metasurface integrated uncooled IR microbolometers. The metasurface is engineered to absorb IR radiation efficiently, eliminating the need for a ?-wave resonant cavity.
2：Sample Selection and Data Sources:
Amorphous Si-Ge-O thin films are fabricated using co-deposition from silicon and germanium targets in an oxygen and argon environment.
3：List of Experimental Equipment and Materials:
Includes RF magnetron sputtering for deposition, hexagonal close-packed aluminum disk arrays for metasurface, and various materials for microbolometer fabrication.
4：Experimental Procedures and Operational Workflow:
The fabrication process involves patterning, deposition, and lift-off techniques, followed by annealing in vacuum to reduce noise.
5：Data Analysis Methods:
Resistance-temperature characteristics are studied to determine TCR and resistivity. Noise measurements are performed to evaluate the device's performance.
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