研究目的
Investigating the effects of GaN capping layer on carrier occupation and interband transition probability of vertically coupled InGaN/GaN quantum dots.
研究成果
The light emission intensity of vertically coupled InGaN/GaN QDs is significantly affected by the distance between QDs, with a minimum intensity observed at d=50?A. This behavior is attributed to changes in the internal field and quasi-Fermi-level separation. The findings suggest that minimizing the distance between QDs can enhance spontaneous emission, providing a design guideline for high-efficiency optoelectronic devices.
研究不足
The study focuses on the theoretical investigation of vertically coupled InGaN/GaN QDs and does not provide experimental validation. The effects of other structural parameters or external conditions on the QDs' properties are not explored.
1：Experimental Design and Method Selection:
The study uses a multi-band effective mass theory to investigate the effects of GaN capping layer on carrier occupation and interband transition probability of WZ coupled InGaN/GaN QDs with piezoelectric and spontaneous polarizations.
2：Sample Selection and Data Sources:
Vertically coupled lens-shaped In
3：3Ga7N QD structures with a diameter of 200?A and a height of 60?A were used. The distance between QDs was changed from d=30 to 70?A. List of Experimental Equipment and Materials:
Not explicitly mentioned.
4：Experimental Procedures and Operational Workflow:
Wavefunctions were obtained by solving the Schr?dinger equation for electrons and the 6×6 Hamiltonian for holes.
5：Data Analysis Methods:
Spontaneous emission coefficients were calculated at the carrier density of N3D=5×1018cm?3 and TE-polarized spectra were obtained by the sum of x- and y-polarized spectra.
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