研究目的
Investigating the integration of Few-layer MoTe2 on a Silicon Microring Cavity for NIR photodetection.
研究成果
The fabricated device on MRR showing improved performance as compared to their linear counterpart by enhancing the optical field at resonance wavelength. This initial demonstration of integrating TMDs into silicon photonics resonators show promising results for functional heterogeneous device integration strategies.
研究不足
The responsivity value is mainly limited by less absorption by MoTe2 layers at ~1550 nm since the bandgap of few layer MoTe2 is ~1eV.
1：Experimental Design and Method Selection:
The study involves the heterogeneous integration of Few-layer MoTe2 on a Silicon microring resonator (MRR) using a developed 2D printer technique.
2：Sample Selection and Data Sources:
Few-layer MoTe2 flakes are obtained using scotch tape exfoliation technique and transferred onto Si photonic chips.
3：List of Experimental Equipment and Materials:
Includes a tunable laser source (Agilent 8164B), optical spectral analyzer (OSA202), and Keithley 2600B source meter.
4：Experimental Procedures and Operational Workflow:
The transfer of MoTe2 flakes is performed using a 2D printer method, followed by testing for optical transmission and spectral shift.
5：Data Analysis Methods:
The performance of the photodetector is evaluated based on responsivity and dark current measurements.
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