研究目的
Investigating the static and dynamic electrical characteristics of GaN-based blue light-emitting diodes with different numbers of quantum wells for visible light communication study.
研究成果
The turn-on voltage increases with the numbers of quantum wells, and at their corresponding turn-on voltage, light-emitting diode with 1 GaN/In0.16Ga0.84N quantum well has the minimum capacitance. LED with 1 GaN/In0.16Ga0.84N quantum wells has the fastest response and maximum communication bandwidth.
研究不足
The study is based on numerical simulation using Silvaco TCAD, which may not fully capture all real-world physical phenomena. The experimental validation is not provided.
1:Experimental Design and Method Selection:
Utilized Silvaco TCAD to numerically analyze the static and dynamic performances of GaN-based blue LED with different numbers of quantum wells.
2:Sample Selection and Data Sources:
Structures with 1, 3, 6, 9, and 12 GaN/In
3:16Ga84N quantum wells were simulated. List of Experimental Equipment and Materials:
Software Silvaco technology computer-aided design.
4:Experimental Procedures and Operational Workflow:
Conducted dc simulation and ac small signal simulation in ATLAS, transient simulation to measure rise time and fall time.
5:Data Analysis Methods:
Analyzed J–V and C–V characteristics, calculated optical rise time and fall time, and determined modulation bandwidth.
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