研究目的
Improving the charge balance and performance of CdSe/ZnS quantum-dot light-emitting diodes with a sputtered zinc-tin-oxide electron-transport layer and a thermally evaporated tungsten-oxide charge-restricting layer.
研究成果
The study demonstrated improved QD-LED performance by optimizing the ZTO ETL deposition process and adding a WOx CRL. The QD-LED with both optimized ZTO ETL and WOx CRL exhibited superior luminance and current efficiency. The findings provide a practical method for improving the electron-hole balance and performance of QD-LEDs and a reliable technique for analyzing carrier behavior.
研究不足
The study acknowledges that further improvements are required to exceed the performance of QD-LEDs with NP-based ETLs. The performance of QD-LEDs with non-NP-based ETLs should be enhanced for practical applications.
1:Experimental Design and Method Selection:
The study employed an inverted hybrid structure for QD-LEDs with a cathode and an inorganic ETL at the bottom, and an organic HTL and anode at the top. The fabrication process of the reactively sputtered ZTO ETL was optimized, and a thermally evaporated WOx CRL was adopted to improve electron-hole balance.
2:Sample Selection and Data Sources:
ITO-coated glass substrates were used for device fabrication. CdSe/ZnS core-shell QDs were used for the EML, and TAPC was used as the HTL material.
3:List of Experimental Equipment and Materials:
Equipment included a pulsed-DC magnetron sputtering system for ZTO deposition, a vacuum thermal evaporation system for WOx CRL deposition, and an I–V–L tester combined with a spectroradiometer for device characterization.
4:Experimental Procedures and Operational Workflow:
The fabrication process involved surface cleaning and modification of the ITO cathode, deposition of the WOx CRL and ZTO ETL, spin-coating of the QD EML, and evaporation of the HTL, HIL, and anode.
5:Data Analysis Methods:
Impedance spectroscopy was used to analyze charge carrier injection and recombination behaviors. The I–V–L characteristics were measured to evaluate device performance.
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X-ray photoelectron spectroscopy
K-Alpha
Thermo Scientific Co.
Used for measuring the chemical bonding states and atomic composition ratios of the ZTO films.
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Ultraviolet photoelectron spectroscopy
AXIS Ultra DLD
Kratos Inc.
Used for extracting the energy band parameters of each unit layer of the QD-LED.
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Ultraviolet-visible spectrophotometer
UV-PC1650
Shimadzu Co.
Used for extracting the optical band gap values from the absorbance curves.
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ITO-coated glass substrates
Geomatec
Used as the substrate for device fabrication.
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CdSe/ZnS core-shell QDs
Zeus
Used for depositing the emission layer (EML).
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TAPC
Used as the hole transport layer (HTL) material.
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WOx
Used as the charge-restricting layer (CRL) and hole injection layer (HIL) material.
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Ag
Used as the anode material.
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Polaronix M6100IVL
M6100IVL
McScience
Used for measuring the current–voltage–luminance (I–V–L) characteristics of the fabricated QD-LEDs.
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Spectrascan-PR650
PR650
Photo Research
Used as a spectroradiometer combined with the I–V–L tester.
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CompactStat
Ivium Tech.
Used for impedance spectroscopy (IS) analysis.
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Semiconductor parameter analyzer
HP4145B
Hewlett Packard Inc.
Used for measuring the electrical properties of the ZTO films.
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