研究目的
Investigating the carrier dynamics process in electron transport layer-free perovskite solar cells to understand the perovskite potential and corresponding device structure design.
研究成果
The study reveals that the dominant charge separation mainly takes place at the FTO/perovskite contact, behaving as the n–p heterojunction. The built-in electric field is through the whole perovskite film in the dark and reduced by the compensation of photoproduction-induced field under illumination. The low efficiency of the ETL-free device attributes to severe carrier recombination due to the low carrier injection at the ETL-free contact.
研究不足
The study is limited by the technical constraints of scanning probe microscopy and capacitance-voltage measurements. The application of the findings is constrained by the specific conditions of the experiments, such as the perovskite thickness and light intensity.
1：Experimental Design and Method Selection:
Scanning probe microscopy technology was used to investigate ETL-free perovskite/transparent conductive film SnO2:F(FTO) contact with different perovskite thickness illuminated by varied light intensity. Mott-Schottky analysis based on capacitance-voltage measurements was conducted to understand the interface property of perovskite/FTO contact.
2：Sample Selection and Data Sources:
Perovskite films with different thicknesses (250 nm and 400 nm) were prepared by changing the concentration of the perovskite precursor solution.
3：List of Experimental Equipment and Materials:
Scanning probe microscopy, conductive atomic force microscopy (c-AFM), Kelvin probe force microscopy (KPFM), and capacitance-voltage measurement equipment were used.
4：Experimental Procedures and Operational Workflow:
The surface potential and local current values were measured under dark and illuminated conditions. The capacitance-voltage characteristics were analyzed to estimate the doping density and the width of the depletion region.
5：Data Analysis Methods:
Mott-Schottky analysis was performed to calculate the doping density and built-in potential. The depletion region width was calculated based on the doping density and built-in potential.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
