研究目的
To propose and demonstrate a high-sensitivity and high-resolution silicon photonic sensor based on a microwave photonic filtering technique.
研究成果
A new sensing interrogation scheme with high sensitivity and high resolution, which employs a SOI-based MDR sensor, has been proposed and successfully demonstrated. The sensing system is based on the MWP filtering technique and comprises a simple optical configuration consisting only of a fixed laser source, an MZM, a MDR and a PD. The use of the MDR provides an effective scheme to equalize the power and to provide a π phase difference in the sidebands for realizing an ultrahigh-resolution sensing interrogation system, thus removing the requirements for fabricating a micro-resonator with ultrahigh Q factor. As a proof-of-concept, a temperature sensing is demonstrated, showing a high temperature sensitivity of 9.91 GHz/°C and a 25 times improvement in the sensing resolution compared to the conventional optical sensing method.
研究不足
The performance of conventional optical interrogation methods is dictated primarily by the quality (Q) factor of the micro-resonator employed which often becomes the major limiting factor determining the resolution or range of the sensing device.
1：Experimental Design and Method Selection:
The sensing system is composed of a fixed wavelength laser diode, an intensity modulator based on MZM, a silicon photonic MDR, and a photodetector (PD). The laser is modulated by the MZM having two RF drive ports and one DC bias port. A 90-degree RF hybrid coupler is used to drive the modulator.
2：Sample Selection and Data Sources:
The all-pass air cladding MDR was fabricated using electron beam lithography technology based on a SOI wafer.
3：List of Experimental Equipment and Materials:
Laser source (Keysight Technologies 81960A), vector network analyser (VNA), electro-optic modulator (Sumitomo Osaka Cement Co., Ltd), electrical 90° hybrid (Marki Microwave), erbium-doped fibre amplifier (EDFA), photodetector (PD).
4：Experimental Procedures and Operational Workflow:
The laser source is fixed at 1555.42nm as the optical carrier. A VNA is used to drive the electro-optic modulator through an electrical 90° hybrid. The DC bias is adjusted using a power supply. An EDFA is inserted between the MDR and the PD to compensate for the chip insertion loss. The detected signal from the PD is sent back to the VNA for measurement.
5：42nm as the optical carrier. A VNA is used to drive the electro-optic modulator through an electrical 90° hybrid. The DC bias is adjusted using a power supply. An EDFA is inserted between the MDR and the PD to compensate for the chip insertion loss. The detected signal from the PD is sent back to the VNA for measurement. Data Analysis Methods:
5. Data Analysis Methods: The performance of the proposed SOI-based MDR sensor was tested as a temperature sensor. The variation in the ambient temperature was simulated by placing the on-chip MDR on a temperature controller (Newport).
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Laser source
81960A
Keysight Technologies
Provides a fixed wavelength laser diode as the optical carrier.
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Vector network analyser
Used to drive the electro-optic modulator.
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Electro-optic modulator
Sumitomo Osaka Cement Co., Ltd
Modulates the laser source.
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Electrical 90° hybrid
Marki Microwave
Drives the electro-optic modulator.
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Erbium-doped fibre amplifier
EDFA
Compensates for the chip insertion loss.
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Photodetector
PD
Detects the signal from the MDR.
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Temperature controller
Newport
Simulates the variation in the ambient temperature.
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