研究目的
Investigating the design and demonstration of ultra-sharp multimode waveguide bends for mode-division multiplexing (MDM) systems to enhance the link capacity of optical interconnects.
研究成果
The study successfully demonstrates ultra-sharp multimode waveguide bends with low excess losses and low inter-mode crosstalk, enabling high-density photonic integrated circuits for MDM systems. The proposed design is scalable for more than three mode-channels.
研究不足
The study is limited by the fabrication precision and the measurement capabilities, particularly the bandwidth of grating couplers and the inter-mode crosstalk of integrated on-chip mode (de)multiplexers.
1:Experimental Design and Method Selection:
The study employs subwavelength grating waveguide structures on silicon to design ultra-sharp multimode waveguide bends. Theoretical and experimental analyses are conducted to evaluate the performance of these bends in terms of excess losses and inter-mode crosstalk.
2:Sample Selection and Data Sources:
The samples are fabricated on a 220-nm thick SOI wafer with a 2-μm thick SiO2 lower-cladding layer. An electron-beam lithography process and an inductively coupled plasma dry-etching process are used for fabrication.
3:List of Experimental Equipment and Materials:
SOI wafer, Ma-N 2403 photoresist, electron-beam lithography system, inductively coupled plasma dry-etching system, plasma-enhanced chemical vapor deposition system for SiO2 upper-cladding.
4:Experimental Procedures and Operational Workflow:
Fabrication of the waveguide bends, followed by characterization using a broadband amplified spontaneous emission (ASE) light source and an optical spectrum analyzer (OSA).
5:Data Analysis Methods:
The performance of the waveguide bends is evaluated based on excess losses and inter-mode crosstalk measurements over a wavelength range of 1500–1600 nm.
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SOI wafer
Substrate for fabricating the waveguide bends.
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Ma-N 2403 photoresist
Used in the electron-beam lithography process for patterning the waveguide structures.
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Electron-beam lithography system
Used for patterning the waveguide structures on the SOI wafer.
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Inductively coupled plasma dry-etching system
Used for etching the silicon layer to form the waveguide structures.
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Plasma-enhanced chemical vapor deposition system
Used for depositing the SiO2 upper-cladding layer.
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Broadband amplified spontaneous emission (ASE) light source
Used as the light source for characterizing the waveguide bends.
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Optical spectrum analyzer (OSA)
Used for measuring the spectral response of the waveguide bends.
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