研究目的
Investigating the distribution of the excess charge carrier injection density in PERC solar cells to understand the kinetic behavior of charge carrier sensitive defects and support reliability improvements.
研究成果
The base averaged excess charge carrier injection density increases with higher PERC efficiencies as well as with higher specific resistivity of the base. For a sufficient description of the injection density at open-circuit condition, the law of mass action under applied voltage considering high-level injection can be used to calculate the injection density. At maximum power point voltage, an effective voltage at the pn-junction is derived considering the voltage drop due to the lumped series resistance.
研究不足
The strength of recombination at each location is not varied strong enough to significantly introduce interaction. The simulation results are treated independently of the location of recombination as one similar group of PERC cells.
1：Experimental Design and Method Selection:
Numerical device simulation with TCAD Sentaurus from Synopsys using state-of-the-art physical models to derive current-voltage characteristics under 1 sun at 25°C.
2：Sample Selection and Data Sources:
Parametrization of a 24% efficient PERC solar cell as a starting point, investigating the influence of increased local recombination and changing base resistivity on Δn by a simulated design of experiment (DoE).
3：List of Experimental Equipment and Materials:
TCAD Sentaurus from Synopsys.
4：Experimental Procedures and Operational Workflow:
Varying the emitter saturation current density, the material saturation current density, the rear surface recombination current density, and the base resistivity systematically in a central composite design of experiment.
5：Data Analysis Methods:
Building a second-order response surface model (RSM) where only significant influences are considered.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
