研究目的
Comparing two different interfaces for optical confinement in GaAs resonators to determine their suitability for active resonators.
研究成果
Microresonators with air/GaAs/air interface showed better spectrum features and higher quality factors compared to those with air/GaAs/AlOx interface, making them more suitable for active resonators despite the expected reduction in surface recombination velocity with AlOx interface.
研究不足
The study is limited by the potential degradation of GaAs layers at high oxidation temperatures and the dependence of the oxidation rate on temperature and layer thickness.
1：Experimental Design and Method Selection:
The study involved the fabrication of cylindrical microresonators using lateral oxidation of Al
2：9Ga1As layers and comparing two types of interfaces for optical confinement in GaAs resonators. Sample Selection and Data Sources:
Three types of samples were used, differing in the thickness of the Al
3：9Ga1As and GaAs layers. List of Experimental Equipment and Materials:
Molecular beam epitaxy (MBE) for epilayer growth, standard photolithography, ICP/RIE dry etching, quartz furnace for oxidation, tapered fiber system for spectrum measurement.
4：Experimental Procedures and Operational Workflow:
Fabrication of cylindrical mesas, oxidation process, wet etching, and optical measurement setup.
5：Data Analysis Methods:
Comparison of experimental results with simulations to determine modal separation and quality factors.
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