研究目的
Investigating the dark current generation mechanism in vertical p-i-n photodetectors on a germanium-on-insulator platform and suggesting methods to suppress it.
研究成果
The dark current in vertical p-i-n photodetectors on a GOI platform is governed by Shockley-Read-Hall and trap-assisted-tunneling effects. Oxygen annealing and GeO2 passivation are suggested as potential methods to suppress the leakage current, offering a pathway to improve the performance of Si-based Ge photodetectors.
研究不足
The study is limited to the analysis of dark current in vertical p-i-n photodetectors on a GOI platform under specific conditions. The suggestions for suppressing dark current, such as oxygen annealing and GeO2 passivation, require further experimental validation.
1：Experimental Design and Method Selection:
The study involved the fabrication of Ge vertical p-i-n photodetectors on a GOI platform using direct wafer bonding and layer transfer technologies. The dark current was analyzed under various temperatures and reverse biases to understand its generation mechanisms.
2：Sample Selection and Data Sources:
Ge epitaxial layers were grown on Si donor wafers, and the photodetectors were fabricated on the GOI platform.
3：List of Experimental Equipment and Materials:
Reduced Pressure Chemical Vapor Deposition (RPCVD) reactor, reactive ion etching (RIE) system, plasma-enhanced chemical vapor deposition (PECVD) system, sputtering equipment.
4：Experimental Procedures and Operational Workflow:
The process included Ge epitaxial growth, ion implantation for doping, wafer bonding, layer transfer, mesa definition, passivation layer deposition, and metal contact formation.
5：Data Analysis Methods:
The dark current was analyzed using temperature-dependent I-V measurements, and the activation energy was extracted to understand the leakage current mechanisms.
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