研究目的
Investigating the influences of thermal annealing and chemical passivation on the optical and electrical properties of ultraviolet light-emitting-diode (UV-LED).
研究成果
Thermal and chemical treatments significantly improved the EL intensity of UV-LEDs, with thermal annealing under N2 showing the strongest enhancement. The improvements were attributed to strain relaxation and surface passivation, as confirmed by Raman spectroscopy and cAFM measurements. This study provides insights into the influence of post-growth treatments on the performance of optoelectronic devices.
研究不足
The study did not investigate the long-term stability of the treated UV-LEDs or the scalability of the treatment processes for industrial production.
1：Experimental Design and Method Selection:
The study involved thermal annealing and chemical passivation treatments on UV-LEDs to investigate their effects on optical and electrical properties.
2：Sample Selection and Data Sources:
UV-LEDs were grown on 2-inch patterned sapphire substrates via metalorganic chemical vapor deposition (MOCVD).
3：List of Experimental Equipment and Materials:
Equipment included a SUSS MA6 mask aligner, Plasmalab System 100 ICP180 ICP-RIE system, Xingnan ZZS500 e-beam evaporation system, and various characterization tools like Olympus optical microscopy, Veeco dimension 3100 V atomic force microscopy (AFM), and Renishaw inVia Reflex spectrometer system.
4：Experimental Procedures and Operational Workflow:
The LEDs underwent chemical treatment with KOH aqueous solution and thermal treatment by rapid thermal annealing (RTA) before metal contact deposition.
5：Data Analysis Methods:
Electroluminescence (EL) spectra, current–voltage (I–V) characteristics, cathodoluminescence (CL) mapping, and Raman spectroscopy were used to analyze the effects of treatments.
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