研究目的
To present a high-responsivity and broadband photoconductive terahertz detector based on a plasmonic nanocavity, enabling high quantum efficiency and ultrafast operation without using short-carrier-lifetime substrates.
研究成果
A high-responsivity and broadband photoconductive terahertz detector can be realized through plasmonic nanocavities without using a short-carrier lifetime substrate. This provides opportunities for the use of new materials and lasers, which were not possible before due to the lack of short-carrier-lifetime, photo-absorbing semiconductors with acceptable resistivity and mobility.
研究不足
The detector with the plasmonic nanocavity starts suffering from the carrier screening effect at optical powers above 5 mW. The LT-GaAs detector offers a lower noise operation due to the lower number of photocarriers inside the photoconductive active region.
1：Experimental Design and Method Selection:
The detector utilizes a plasmonic nanocavity formed by a distributed Bragg reflector (DBR) and plasmonic nanostructures to trap pump photons inside a thin, high mobility photo-absorbing region.
2：Sample Selection and Data Sources:
A detector prototype is fabricated and characterized in a THz-TDS setup consisting of a large-area plasmonic terahertz emitter and Ti:Sapphire laser.
3：List of Experimental Equipment and Materials:
AlGaAs/GaAs DBR, plasmonic nanostructures, intrinsic GaAs region, Ti:Sapphire laser.
4：Experimental Procedures and Operational Workflow:
The detected power spectra are obtained by taking the Fourier transform of the time-domain traces of the output photocurrent.
5：Data Analysis Methods:
The performance is compared with a comparable photoconductive detector based on a short-carrier lifetime semiconductor.
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