1：Experimental Design and Method Selection:

The study involved the vertical growth of MoX2 (X = S, Se) films on rough transparent conducting F-doped SnO2 glass substrates using a metal-agglomeration-suppressed growth (MASG) method. The films were used as photogenerated carrier-guiding layers (CGLs) in transparent hydrogenated amorphous silicon (a-Si:H) thin film solar cells (TFSCs).

2：Sample Selection and Data Sources:

Samples included MoS2 and MoSe2 films grown on SiO2/Si and FTO glass substrates. The FTO substrates had a root-mean-square (rms) roughness of 38.0 nm.

3：0 nm. List of Experimental Equipment and Materials:

3. List of Experimental Equipment and Materials: Equipment included a solar simulator (ORIEL Instruments), TEM system (JEOL, JEM-ARM200F), Raman spectroscopy system (HORIBA Jobin Yvon), and an ultraviolet/visible/near infrared spectrophotometer (Lambda 1050). Materials included sulfur and selenium granules (99.999%, iTASCO), and Mo granules (99.99%, LTS).

4：0). Materials included sulfur and selenium granules (999%, iTASCO), and Mo granules (99%, LTS). Experimental Procedures and Operational Workflow:

4. Experimental Procedures and Operational Workflow: Mo films were sulfurized or selenized at growth temperatures of 500, 600, or 700 °C on SiO2/Si substrates; or at 530 °C on FTO glass substrates. The temperature of S- and Se-cracking zones was 950 °C. Layers of p-type μc-Si:H, intrinsic a-Si:H, and n-type μc-Si:H were deposited using PECVD at a substrate temperature of 200 °C.

5：Data Analysis Methods:

The J–V characteristics were measured at room temperature at light intensities of 100 to 20 mW cm?2 using a solar simulator. EQE values were measured using an EQE measurement system (IQE-200, Newport).