研究目的
Investigating the effect of doping silicon-based solar cells with nickel atoms on their efficiency, particularly in the infrared spectral region.
研究成果
Doping silicon-based solar cells with nickel atoms and subsequent thermal treatment significantly improves their principal parameters, suggesting a promising approach for enhancing efficiency in the infrared spectral region.
研究不足
The study does not fully explain the mechanism behind the increased efficiency due to nickel doping, particularly the role of optical absorption. Additional studies are required to confirm or reject the hypothesis of plasmon resonance increasing the absorption index.
1：Experimental Design and Method Selection:
The study involved doping silicon-based photocells with nickel atoms and subjecting them to thermal treatment to observe changes in short-circuit current density (Jsc) and open-circuit voltage (Voc).
2：Sample Selection and Data Sources:
Initial p–n structures were created via the diffusion of phosphorus in silicon plates of p-type.
3：List of Experimental Equipment and Materials:
Silicon plates of p-type, phosphorus, nickel, incandescent lamp for illumination.
4：Experimental Procedures and Operational Workflow:
Specimens were divided into groups, doped with nickel, subjected to thermal annealing, and their electrical parameters were measured.
5：Data Analysis Methods:
The changes in Jsc and Voc were analyzed to determine the effect of nickel doping and thermal treatment.
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