研究目的
Investigating the laser irradiation-induced structural, microstructural and optical properties change in Bi-doped As40Se60 thin films.
研究成果
The study concluded that laser irradiation induces structural and optical changes in Bi-doped As40Se60 thin films, leading to a decrease in the optical band gap (photodarkening). These changes are attributed to the increase in density of defect states in the gap. The findings suggest potential applications in optical devices requiring high local changes of optical parameters.
研究不足
The study is limited to the effects of 532 nm laser irradiation on Bi-doped As40Se60 thin films. The findings may not be generalizable to other wavelengths or types of irradiation.
1：Experimental Design and Method Selection:
The study involved the preparation of Bi-doped As40Se60 thin films by the melt quenching technique followed by thermal evaporation. The films were then irradiated with a DPSS laser of wavelength 532 nm to study the photo-induced changes.
2：Sample Selection and Data Sources:
High-purity Bi, Se, and As precursors were used to prepare the bulk alloys. Thin films of As40Se55Bi5 and As40Se45Bi15 were prepared from the bulk sample.
3：List of Experimental Equipment and Materials:
X-ray diffractometer (Bruker D8 advance), field emission scanning electron microscopy (FESEM) (ZEISS, SUPRA-40), UV–Vis–NIR spectrometer (IFS66v/S), and Raman measurements were carried out by 514.5 Ar laser (LabRam HR System).
4：5 Ar laser (LabRam HR System).
Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: The films were characterized before and after laser irradiation using XRD, FESEM, UV–Visible spectrometer, and Raman spectroscopy to study the structural, microstructural, and optical properties changes.
5：Data Analysis Methods:
The optical band gap was calculated using the Tauc equation, and the structural parameters were analyzed using XRD data. The surface morphology and composition were analyzed using FESEM and EDAX.
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