研究目的
Demonstrating a high signal-to-noise ratio (SNR) for a photonic-crystal nanophotodetector (PD) towards attojoule optical reception.
研究成果
The resistor-loaded nano-PD demonstrated a significantly higher SNR compared to conventional p-i-n PDs, enabling optical reception at less than 100 aJ with a bit error rate of 10–9. This approach offers a promising solution for dense optoelectronic interfaces in photonic networking and computing chips, with minimal electrical energy consumption.
研究不足
The observable bandwidth is limited by the large capacitance of the measurement setup, restricting the frequency range for SNR evaluation.
1:Experimental Design and Method Selection:
The study focuses on a photonic-crystal nanophotodetector (PD) with ultralow capacitance, designed for high-impedance loading to achieve efficient light-to-voltage conversion and thermal noise suppression.
2:Sample Selection and Data Sources:
The PD incorporates an embedded InGaAs absorber in the InP-PhC waveguide, with a lateral p-i-n junction formed by Zn diffusion and Si ion implantation.
3:List of Experimental Equipment and Materials:
The setup includes a scanning electron microscopy (SEM) for imaging, a field-effect transistor (FET) amplifier, and a radio frequency (RF) spectrum analyzer for noise measurement.
4:Experimental Procedures and Operational Workflow:
The PD's performance was evaluated through static responses for CW light input and SNR measurement using modulated light.
5:Data Analysis Methods:
The SNR and noise equivalent power (NEP) were calculated based on the measured signal and noise power spectra.
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