摘要： A structure for AlxGa1-xAs/InP multi-junction solar cell is proposed by using numerical simulation and the simulation is done with the help of Analysis of Microelectronic and Photonic Structures (AMPS-1D) simulator. The thickness of p-layer of AlxGa1-xAs top cell is varied from 20 nm to 150 nm keeping the n-layer thickness at a constant value of 800 nm. The thickness of n-layer of InP bottom cell is varied from 100 nm to 7000 nm and p-layer thickness is fixed at 200 nm. The band gap of AlxGa1-xAs top cell absorber layer is varied from 1.42 eV to 1.79 eV. The highest power conversion efficiency (PCE) obtained is 35.643% (Voc=2.385 V, Jsc = 15.789 mA/cm2, FF = 0.88). The operating temperature is also varied from 0 °C to 70 °C. We observed that with the increase in operating temperature, the normalized open circuit voltage decreased almost linearly which shows better stability of this proposed multi-junction solar cell.