研究目的
Investigating the effect of the indium content of InGaN quantum wells on the local breakdown phenomenon and developing flat-type InGaN-based LEDs without an n-type contact electrode using a local breakdown conductive channel.
研究成果
The resistance of the LBCC decreases when the indium content of the InGaN QWs is increased, leading to a flat-type p-p* LED with higher light output power. However, further studies are needed to decrease the series resistance of the LBCC in the p-p* LEDs.
研究不足
The series resistance of the p-p* LEDs with the LBCC is still higher than that of conventional n-p LEDs, which may lower the emission efficiency, reliability, etc. Further studies on decreasing the series resistance of the LBCC in the p-p* LEDs are required.
1：Experimental Design and Method Selection:
InGaN-based LED epitaxial layers were grown on (0001) c-plane sapphire using metal-organic chemical vapor deposition. The effect of the indium content in the InGaN/GaN QWs on the reverse characteristics of the LEDs was investigated by controlling the growth temperature of InGaN QWs.
2：Sample Selection and Data Sources:
LED chips with a size of 450 μm × 450 μm were fabricated by a conventional mesa LED process with lateral n-p and p-p electrode structures.
3：List of Experimental Equipment and Materials:
Rigaku DMAX 2200 HR-XRD instrument for crystallographic properties, HP4155 parameter analyzer for electro-optical characteristics.
4：Experimental Procedures and Operational Workflow:
Formation of the local breakdown region in the p-layer by applying anode and cathode current to the p1 and p2 layers, respectively. Evaluation of the crystallographic and electro-optical properties of the LEDs.
5：Data Analysis Methods:
Calculation of the indium composition of the InGaN QW using Vegard’s law, monitoring the effect of the In content on the reverse leakage current and local breakdown phenomena.
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