研究目的
Investigating the mechanisms to suppress non-radiative recombination losses in CsPbI3 perovskite solar cells to achieve high open-circuit voltage and efficiency.
研究成果
The introduction of Ba(OH)2 at the SnO2/CsPbI3 interface and TOPO in the CsPbI3 bulk significantly reduced non-radiative energy losses, leading to a high PCE of 14% and an impressive VOC of 1.17 V, corresponding to a bandgap-to-VOC loss of only ~0.6 eV. This work provides a combined strategy to effectively suppress non-radiative energy losses and paves the way towards reaching the thermodynamic limit VOC for CsPbI3 PSCs.
研究不足
The CsPbI3 films and PSCs without encapsulation degraded very fast in air with a humidity of ~50%, indicating significant challenges in phase- and materials stability that need to be addressed for commercialization.
1：Experimental Design and Method Selection:
The study focused on enhancing the performance of CsPbI3 PSCs by introducing Ba(OH)2 at the SnO2/CsPbI3 interface and TOPO in the CsPbI3 bulk to reduce non-radiative recombination losses.
2：Sample Selection and Data Sources:
CsPbI3 films were prepared on ITO/SnO2 substrates with and without passivation layers.
3：List of Experimental Equipment and Materials:
Instruments included a solar simulator for J-V measurements, XRD for structural analysis, SEM for morphology, and PL imaging for defect visualization. Materials included CsI, PbI2, DMSO, Ba(OH)2, and TOPO.
4：Experimental Procedures and Operational Workflow:
The CsPbI3 films were spin-coated and annealed at 350 °C. Ba(OH)2 and TOPO were applied as passivation layers.
5：Data Analysis Methods:
Performance parameters (VOC, JSC, FF, PCE) were extracted from J-V curves. PL imaging and TRPL were used to analyze defect passivation and carrier lifetimes.
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SnO2
Alfa Aesar
Used as an n-type interface layer in the solar cells.
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Ba(OH)2
Applied as a surface modifier at the SnO2/CsPbI3 interface to enhance VOC.
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TOPO
Added into the perovskite precursor solution to passivate defects in the bulk.
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CsI
Sigma Aldrich
Used in the preparation of CsPbI3 perovskite precursor.
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PbI2
Xi'an Polymer Light Technology
Used in the preparation of CsPbI3 perovskite precursor.
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DMSO
Used as a solvent in the preparation of CsPbI3 perovskite precursor.
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PDCBT
Used as a p-type interface layer in the solar cells.
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MoOx
Used as part of the electrode in the solar cells.
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Au
Used as part of the electrode in the solar cells.
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