研究目的
Investigating the development of a structure to efficiently extract photons emitted by a GaAs quantum dot tuned to Rubidium, employing a broadband microcavity with a curved gold backside mirror.
研究成果
The study concludes with the successful development of high-performance GaAs single photon emitters operating close to the 87Rb D1 transition, demonstrating straightforward integration on piezoelectric actuators for strain-tuning the emission wavelength.
研究不足
The study notes a discrepancy between the simulated and measured collection efficiency, attributed to the strong dependence of the efficiency on the lateral position of the quantum dot in the cavity and fabrication imperfections.
1:Experimental Design and Method Selection:
The study employs a broadband microcavity with a curved gold backside mirror fabricated by photoresist reflow, dry reactive ion etching, and selective wet chemical etching.
2:Sample Selection and Data Sources:
GaAs quantum dots are used, with the distance of the quantum dot to the surface matching the target paraboloid focal length.
3:List of Experimental Equipment and Materials:
Includes a combination of photoresist reflow, dry reactive ion etching in an inductively coupled plasma, and selective wet chemical etching.
4:Experimental Procedures and Operational Workflow:
Fabrication involves photoresist reflow, dry etching, subsequent flip-chip polymer gluing, and back etching.
5:Data Analysis Methods:
Optical characterization is performed using confocal micro-photoluminescence spectroscopy.
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