研究目的
Investigating the interplay between various active regions and the interband transition for AlGaN-based deep-ultraviolet light-emitting diodes to enable a reduced TM-polarized emission.
研究成果
The study demonstrates that TE-polarized DUV light can be obtained by using very thin quantum wells, which is beneficial for improving light extraction efficiency. The emission wavelength can be made shorter by increasing the AlN composition in the quantum barriers for very thin quantum wells. However, attention must be paid to improving electron injection efficiency in such devices.
研究不足
The study is based on numerical simulations, and the practical growth of ultrathin Al-rich AlGaN layers by metal organic chemical vapor deposition (MOCVD) is challenging. The electron injection efficiency for devices with very thin quantum wells can be low, requiring further optimization.
1：Experimental Design and Method Selection:
Numerical calculations were conducted using APSYS to solve drift-diffusion equations, current continuity equations, Schr?dinger and Poisson’s equations with proper boundary conditions. The conduction bands were calculated by a parabolic band model, and the valence bands were calculated by solving the 6 × 6 Hamiltonian matrix.
2：Sample Selection and Data Sources:
Different DUV LED architectures were designed with variations in quantum well thickness (Lw), quantum barrier thickness (Lb), AlN composition in the quantum well (Xw), AlN composition in the quantum barrier (Xb), and polarization level (P).
3：List of Experimental Equipment and Materials:
The study utilized numerical simulation tools without specifying physical equipment.
4：Experimental Procedures and Operational Workflow:
The impact of active-layer parameters on emission wavelength and polarization properties was systematically investigated through numerical simulation.
5：Data Analysis Methods:
The emission wavelength and internal quantum efficiency were analyzed in terms of different Lw, Lb, Xw, Xb, and P.
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