研究目的
To obtain intensive selective THz electroluminescence due to incoherent 2D plasmon excitation in a AlGaN/GaN heterojunction under conditions of negligible Joule heating of the samples.
研究成果
The study demonstrates the possibility of obtaining intensive selective THz electroluminescence due to incoherent 2D plasmon excitation in a AlGaN/GaN heterojunction under conditions of negligible Joule heating. The findings may have important practical applications for the creation of portable selective terahertz emitters.
研究不足
The study is limited by the conditions of negligible Joule heating of the samples and the specific design of the AlGaN/GaN plasmonic structure with a surface metal grating.
1：Experimental Design and Method Selection:
The study involves the investigation of THz electroluminescence from a grating-based AlGaN/GaN plasmonic structure under conditions of 2D electron heating in a lateral electric field.
2：Sample Selection and Data Sources:
The structure was designed to ensure the maximum amplitude of the fundamental 2D plasmon mode under the condition of a spectral overlap with the Ge:Ga detector's sensitivity band.
3：List of Experimental Equipment and Materials:
A fast Ge:Ga detector was used for applying short voltage pulses, and a magnetic-field tuned n-InSb cyclotron resonance filter was used for spectral measurements.
4：Experimental Procedures and Operational Workflow:
Preliminary measurements of equilibrium transmission spectra were carried out to detect the exact position of 2D plasmon resonance. Spectral measurements of THz electroluminescence were performed on samples cooled to
5：2 K. Data Analysis Methods:
The field dependence of the effective temperature of hot 2D electrons was determined with the help of the power balance equation.
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