研究目的
Investigating the effect of a p-type ZnO insertion layer on the external quantum efficiency of GaInN light-emitting diodes.
研究成果
The insertion of a p-type ZnO layer between the ITO electrode and the p-type GaN layer improves the EQE of GaInN green LEDs. The improvement is attributed to higher hole injection efficiency and better electron confinement, supported by device simulations. The study suggests that controlling strain in LEDs can potentially improve their efficiency.
研究不足
The study does not fully explore the optimization of the p-type ZnO layer to reduce operating voltage. The effect of strain induced by the ZnO layer on the LED's performance could be further investigated with more detailed experimental techniques.
1：Experimental Design and Method Selection:
The study involves inserting a p-type ZnO layer between the ITO electrode and the p-type GaN layer in GaInN LEDs to investigate its effect on EQE.
2：Sample Selection and Data Sources:
A commercial GaInN LED wafer emitting approximately 530 nm was used.
3：List of Experimental Equipment and Materials:
The epitaxial structure includes a buffer layer, an undoped GaN layer, an n-type GaN layer, light-emitting GaInN/GaN MQWs, a p-type AlGaN EBL, and a top p-type GaN layer. A hybrid beam deposition (HBD) method was used for ZnO deposition.
4：Experimental Procedures and Operational Workflow:
The wafer was cut into two pieces, one for ZnO deposition and the other as a reference. LED chips were fabricated using a conventional method.
5：Data Analysis Methods:
The APSYS device simulation and LightTools? raytracing simulation were used to support the analysis.
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