研究目的
Investigating the development of a low-loss and low-cost, suspended silicon waveguide technology for THz frequencies to enhance integrated THz sensing and spectroscopy applications.
研究成果
The demonstrated ultra low-loss chipscale integrated THz photonic platform presents a new tool for integrated THz spectroscopy with increased light-matter interaction, showcasing versatility and viability for sensing and spectroscopy applications.
研究不足
The study is limited by the current technological fabrication efforts required for on-chip waveguide losses and the need for further optimization of the photonic crystal cavity for sensing purposes.
1:Experimental Design and Method Selection:
The study focuses on the design and fabrication of a suspended silicon waveguide for THz frequencies, utilizing deep-reactive ion etching of a SOI wafer.
2:Sample Selection and Data Sources:
Waveguides of varying lengths (
3:87, 9, 9, 1, and 1 cm) were fabricated and measured. List of Experimental Equipment and Materials:
A vector network analyzer extension was used for S-parameter extraction in the 500-750 GHz range.
4:Experimental Procedures and Operational Workflow:
The fabrication process involved double-sided processing of a SOI wafer, with the waveguide tapered for smooth injection from the metallic waveguide of the VNA to the Si channel.
5:Data Analysis Methods:
Modal propagation losses were extracted from transmission measurements, with the attenuation constant derived from the linear variation of the S21 parameter as a function of length.
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