研究目的
Investigating the fabrication and performance of ultralow-voltage thin-film transistors using self-assembled indium-tin-oxide as the semiconducting layer and microporous SiO2 treated by H3PO4 as the gate dielectric.
研究成果
The fabricated ultralow-voltage transparent ITO-TFTs with EDL effect exhibit high current output and ultralow-voltage operation, making them promising for fast-switching and low-power electronics on temperature-sensitive substrates. The study demonstrates the potential of solution-processed microporous SiO2 as a gate dielectric for low-power, large-area, and flexible applications.
研究不足
The study is limited by the room-temperature processing conditions and the specific materials used (ITO and microporous SiO2 treated with H3PO4). The potential switching speed of the TFTs is not solely determined by the capacitance-frequency characteristic but also depends on the conductivity-frequency response.
1：Experimental Design and Method Selection:
The study involves the fabrication of TFTs at room temperature using self-assembled ITO as the semiconducting layer and microporous SiO2 immersed in 5% H3PO4 as the gate dielectric.
2：Sample Selection and Data Sources:
Glass substrates were used for the fabrication of TFTs.
3：List of Experimental Equipment and Materials:
RF magnetron sputtering for ITO gate electrode deposition, PECVD for microporous SiO2 deposition, and dc sputtering for ITO source and drain electrodes.
4：Experimental Procedures and Operational Workflow:
The process includes deposition of ITO gate electrode, microporous SiO2 gate dielectric, immersion in H3PO4, drying, and patterning of ITO source and drain electrodes.
5：Data Analysis Methods:
Electrical transport measurements were recorded with a semiconductor parameter characterization system and optical transmittance was measured using a spectrophotometer.
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