研究目的
To investigate the enhancement effects of Al2O3 buffer layers on the yield of single-walled carbon nanotubes (SWCNTs) grown at low temperatures using Co catalysts by an alcohol gas source chemical vapor deposition method.
研究成果
The study successfully grew SWCNTs at 400oC using Co catalysts on Al2O3 buffer layers, demonstrating that optimizing ethanol pressure is crucial for low-temperature synthesis. However, the enhancing effect of Al2O3 buffer layers on SWCNT yield diminished below 500oC, attributed to reduced catalyst aggregation on SiO2/Si substrates at lower temperatures.
研究不足
The enhancement effect of Al2O3 buffer layers on SWCNT yield was reduced below 500oC. The study also noted a decrease in SWCNT crystallinity at lower growth temperatures.
1：Experimental Design and Method Selection:
The study employed an alcohol gas source chemical vapor deposition (CVD) method for SWCNT growth using Co catalysts on Al2O3 buffer layers. The methodology focused on optimizing ethanol pressure and growth temperature to enhance SWCNT yield.
2：Sample Selection and Data Sources:
Co catalysts were deposited on Al2O3/SiO2/Si substrates. Al2O3 buffer layers were formed by depositing Al on SiO2/Si substrates followed by oxidation.
3：List of Experimental Equipment and Materials:
Equipment included an ultrahigh vacuum (UHV) chamber for Co deposition, a quartz crystal oscillator for thickness monitoring, a UHV chamber for SWCNT growth equipped with a stainless steel nozzle for ethanol gas introduction, a pyrometer for temperature monitoring, field-emission scanning electron microscopy (FESEM) for morphology characterization, and a Raman system for evaluating SWCNT diameter and chirality.
4：Experimental Procedures and Operational Workflow:
Co and Al were deposited on substrates, followed by SWCNT growth at controlled ethanol pressures and temperatures. The morphology and properties of the grown SWCNTs were then characterized.
5：Data Analysis Methods:
Raman spectra were analyzed to evaluate SWCNT yield and crystallinity. In-plane XRD was used to characterize Al2O3 buffer layers.
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