研究目的
To synthesize highly luminescent and stable red-emitting CsPbBrI2/PbSe heterojunction nanocrystals (h-NCs) via an epitaxial solution growth method for optoelectronic device applications.
研究成果
Highly stable and luminescent red-emitting CsPbBrI2/PbSe heterojunction h-NCs were synthesized based on a successful epitaxial growth method. Incorporation of PbSe can passivate the surface trap defects and enhance the stability of CsPbBrI2. Owing to removing the undesired trap states, CsPbBrI2/PbSe h-NCs possess a higher PLQY than that of pristine CsPbBrI2 NCs. Theoretical calculations based on DFT revealed that the high stability of CsPbBrI2/PbSe h-NCs results from strong interaction between Se atoms of PbSe contacting with CsPbBrI2 (200) surface (with PbX2 termination).
研究不足
The technical and application constraints of the experiments, as well as potential areas for optimization, were not explicitly mentioned in the paper.
1:Experimental Design and Method Selection
Epitaxial solution growth method was used to synthesize CsPbBrI2/PbSe h-NCs, satisfying lattice-matching condition between CsPbBrI2 and PbSe.
2:Sample Selection and Data Sources
CsPbBrI2/PbSe h-NCs were synthesized with four different Se:Pb ratios of 0, 0.025, 0.05 and 0.075.
3:List of Experimental Equipment and Materials
Transmission electron microscopy (TEM), High-Angle Annular Dark Field (HAADF-STEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), ultrafast transient absorption (TA), and time-resolved photoluminescence (TRPL) spectroscopy were used.
4:Experimental Procedures and Operational Workflow
The products were collected by high-speed centrifugations directly. No additional antisolvent was added to keep the surface unaltered during collection of these nanocrystals. The resulting samples were dispersed in hexane or toluene for further characterizations.
5:Data Analysis Methods
First-principle calculations based on density functional theory (DFT) were performed to reveal the detailed interfacial geometry associated with electronic properties.
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