摘要： The study of p-type dye sensitized solar cells (p-DSCs) is appealing but challenging. Although the devices have been studied for 20 years, light conversion efficiency is lag far behind those of n-DSCs. Very recently, on the basis of a core-shell structure, a novel solid-state p-DSC (p-ssDSCs) has been fabricated, which showed great enhancement in open-circuit voltage and dye regeneration rate. To further improve the performance of such devices, charge diffusion, recombination process and the main limiting factors have to be understood. In the present paper, core-shell p-ssDSCs with ZnO as an electron conductor were fabricated by atomic layer deposition. The charge transport time was determined to be ca. 0.1 ms, which is about 2 orders of magnitude faster than those of typical liquid devices with I-/I3- as a redox mediator. As a consequence, the devices exhibit the highest reported apparent charge diffusion coefficient (Dapp) among p-DSCs. It is ascribed to an electron limiting diffusion process by the ambipolar diffusion model, suggesting a different charge transport determining mechanism in contrast to liquid p-DSCs. The charge recombination rate is 1-2 orders of magnitude slower than its charge transport time, resulting in that the estimated charge collection efficiency is near unity. Detailed analysis of the incident photon-to-electron conversion efficiency suggests, that the energy conversion efficiency in these p-ssDSCs is currently limited by a large fraction of dyes that is not fully electrically connected in the device.