研究目的
To develop a new approach for Sn alloying in MoS2 monolayers to improve the optoelectronic performance of TMD-based photodetectors, specifically to enhance the response time while maintaining high photoresponsivity.
研究成果
The study successfully demonstrates the controllable synthesis of high-quality Mo1-xSnxS2 alloy monolayers using a NaCl-assisted CVD method. The alloy monolayers exhibit improved optoelectronic performance, with a maximum responsivity of 12 mA/W and a minimum response time of 20 ms, which is faster than most reported MoS2 based photodetectors. This work provides new insights into precision 2D alloy engineering for enhancing the performance of TMD-based photodetectors.
研究不足
The presence of certain defects in the as-grown Mo1-xSnxS2 alloy monolayers may affect the device performance, such as mobility and photoresponsivity. The response time, although improved, is still far from practical applications and could be further reduced by constructing p-n/Schottky junction detectors or other advanced structures.
1：Experimental Design and Method Selection:
The study employs a customized chemical vapor deposition (CVD) method synergized with the effects of common salt (NaCl) to grow high-quality and large-size Mo1-xSnxS2 alloy monolayers. The method involves the thermal evaporation of MoO3 precursor and the formation of intermediate metal oxychloride vapor from SnO2 precursor with NaCl assistance.
2：Sample Selection and Data Sources:
SiO2/Si substrates were used for the growth of Mo1-xSnxS2 monolayers. The composition of the alloys was varied by adjusting the ratio of precursor sources or changing the distance among the precursor sources.
3：List of Experimental Equipment and Materials:
The setup includes a CVD system, MoO3 and SnO2/NaCl powders as precursors, and sulfur powder. Characterization was performed using optical microscopy, SEM, AFM, XPS, Raman and PL measurements, and STEM.
4：Experimental Procedures and Operational Workflow:
The growth process involved heating the precursors to specific temperatures in a controlled atmosphere to synthesize the alloy monolayers. The distance between the sulfur and MoO3 powders was varied to control the alloy composition.
5：Data Analysis Methods:
The composition and quality of the alloys were analyzed using XPS, Raman, and PL spectroscopy. The optoelectronic properties of the photodetectors were measured using a Keithley analyzer under dark and illuminated conditions.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容-
FEI INSPECT F50 SEM
INSPECT F50
FEI
Characterization of the surface morphologies of Mo1-xSnxS2 alloys.
-
Bruker Dimension ICON AFM
Dimension ICON
Bruker
Characterization of the thickness of the as-grown Mo1-xSnxS2 alloys.
-
Thermo Scientific Esca lab 250Xi XPS
Esca lab 250Xi
Thermo Scientific
Elemental composition measurement of the as-grown Mo1-xSnxS2 alloys.
-
Keithley 2643B analyzer
2643B
Keithley
Measurement of the electrical and photoresponse characteristics of the Mo1-xSnxS2 devices.
-
MoO3
Precursor for Mo source in the CVD growth of Mo1-xSnxS2 alloy monolayers.
-
SnO2
Precursor for Sn source in the CVD growth of Mo1-xSnxS2 alloy monolayers.
-
NaCl
Assists in the formation of intermediate metal oxychloride for the CVD growth of Mo1-xSnxS2 alloy monolayers.
-
Sulfur powder
Precursor for S source in the CVD growth of Mo1-xSnxS2 alloy monolayers.
-
SiO2/Si substrates
Substrate for the growth of Mo1-xSnxS2 alloy monolayers.
-
Renishaw LabRAM Invia micro-Raman system
LabRAM Invia
Renishaw
Raman and PL intensity mapping characterizations of the as-grown Mo1-xSnxS2 alloys.
-
Themis z STEM
Themis z
High angle annular dark field (HAADF)-STEM imaging of the Mo1-xSnxS2 alloys.
-
MDL III series lasers
MDL III
Generation of spectral photocurrent response in the photodetectors.
-
登录查看剩余10件设备及参数对照表
查看全部
