研究目的
Investigating the use of molecular doping as an efficient method for small molecules and polymers employed as hole transport materials in hybrid perovskite solar cells to improve their performance and stability.
研究成果
The study confirms the effectiveness of F4-TCNQ molecular doping in enhancing the performance and stability of perovskite solar cells using both Spiro-OMeTAD and P3HT as HTMs. Optimal doping levels were identified to maximize charge extraction while minimizing adverse effects from aggregate formation. The research demonstrates the potential for molecular doping to improve the long-term stability and efficiency of perovskite solar cells.
研究不足
The study highlights the technical constraints related to the optimal doping concentration to avoid aggregate formation at the interface between the perovskite and the HTM, which affects hysteresis and overall performance. The application is limited by the need for fine optimization of doping levels to balance charge extraction and minimize detrimental effects.
1：Experimental Design and Method Selection:
The study employed molecular doping in a planar heterojunction configuration on compact-TiO2 (c-TiO2:PHJ) for both small molecule (Spiro-OMeTAD) and polymer (P3HT) hole transport materials (HTMs). F4-TCNQ was used as a dopant in various concentrations.
2：Sample Selection and Data Sources:
CH3NH3PbI3 perovskite layers were grown with reduced surface defects and large grain size.
3：List of Experimental Equipment and Materials:
Equipment included a MERLIN Zeiss field emission gun scanning electron microscopy (FEGSEM), a monochromator Omni 300 LOT ORIEL, a Keithley 2400 Source Measure Unit, and a solar simulator Spectra Physics Oriel 150 W. Materials included F4-TCNQ, Spiro-OMeTAD, P3HT, and TiO
4：Experimental Procedures and Operational Workflow:
The study involved the synthesis of CH3NH3PbI3, preparation of doped HTM solutions, spin-coating of layers, and device fabrication followed by characterization.
5：Data Analysis Methods:
Photovoltaic performance was evaluated through current-voltage characteristics, external quantum efficiency measurements, and analysis of shunt and series resistances.
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