1：Experimental Design and Method Selection:

The study involved the deposition of YSZ thin films on p-type Si substrates using pulsed laser deposition (PLD) at a substrate temperature of 700 oC. The effect of in-situ post-deposition annealing (PDA) in oxygen ambient was investigated.

2：Sample Selection and Data Sources:

Three sets of YSZ samples were studied: as-deposited (set-A), in-situ PDA for 10 min (set-B), and in-situ PDA for 30 min (set-C).

3：List of Experimental Equipment and Materials:

A KrF laser (λ= 248 nm) was used for PLD. The thickness of the oxide layer was measured using a spectroscopic ellipsometer. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and ellipsometry were used to characterize the films.

4：Experimental Procedures and Operational Workflow:

The films were deposited at an oxygen pressure of 10-5 mbar. Post-metallization annealing was carried out at 400°C in nitrogen ambient for 10 min. Electrical characterizations were performed using a semiconductor parameter analyzer and a probe station with thermal chuck.

5：Data Analysis Methods:

The electrical properties were analyzed from the capacitance-voltage (C-V) and current-voltage (I-V) characteristics. XPS depth profiling was used to study the composition of the film and the interface quality.