摘要： The temperature dependence of interdot spin-transfer dynamics at laterally coupled excited states (ESs) in high-density InGaAs quantum dots (QDs) was studied using spin- and time-resolved photoluminescence spectroscopy. At low temperatures below 100 K, temporary suppression of electron-spin polarization decay due to selective relaxation of minority spins from emissive ESs to lower-energy states in neighboring QDs was observed. In the temperature range from 20 K to 140 K, thermal activation of electron spins from lower-energy QD states to higher-energy states via interdot transfer prevents the aforementioned selective relaxation of minority spins, leading to a faster decay of electron-spin polarization during light emission. At high temperatures above 140 K, reinjection of depolarized electron spins from barriers after thermal escape from QD ESs accelerates the further decay of the electron-spin polarization, wherein the electron spins can be activated via ladderlike interdot transfer. These findings indicate that the suppression of reinjection of electron spins from barriers in a high-density QD system is crucial for maintaining high electron-spin polarization during light emission at high temperatures.