研究目的
Investigating the impact of systematic doping of rare earth ions on the structural and optoelectronic characteristics of NiOx hole transport layer in inverted perovskite solar cells and their photovoltaic performances.
研究成果
The research demonstrates that RE doping can significantly modify the conductivity and band alignment of NiOx HTL, leading to improved photovoltaic performance and stability of inverted PSCs. The optimal doping condition with 3% Eu:NiOx HTL achieved a PCE of 15.06%, showing a 23.4% improvement over pristine NiOx HTL. This indicates RE:NiOx as a promising hole extraction material for high-performance inverted PSCs.
研究不足
The study focuses on the impact of RE doping on NiOx HTL in inverted PSCs, but the long-term stability under various environmental conditions and the scalability of the solution-based method for large-area devices were not extensively explored.
1:Experimental Design and Method Selection:
A series of REs (Ce, Nd, Eu, Tb, and Yb) doped NiOx HTLs were prepared by a simple solution process for efficient inverted PSCs building. The influence of REs doping types and concentrations on the structural, electrical, and photoelectric characteristics of the NiOx HTL was systematically investigated.
2:Sample Selection and Data Sources:
The samples were prepared using nickel acetate tetrahydrate and rare earth nitrate hexahydrates with different molar ratios (1%, 3%, 5%) mixed into the solution with nickel acetate tetrahydrate and ethanolamine.
3:List of Experimental Equipment and Materials:
Materials included lead (II) iodide, methylammonium iodide, [6,6]-Phenyl-C61-butyric Acid Methyl Ester (PCBM [60]), nickel acetate tetrahydrate, and rare earth salts. Equipment included a solar simulator for J-V measurements, UV–Vis spectroscopy, X-ray diffraction spectra (XRD), scanning electron microscope (SEM), atomic force microscope (AFM), and X-ray photoelectron spectroscopy (XPS).
4:Experimental Procedures and Operational Workflow:
The HTLs were obtained by spin-coating the prepared NiOx or RE:NiOx precursor solutions on cleaned FTO substrates, followed by an annealing procedure. The MAPbI3 perovskite precursor was prepared via one-step method and coated onto the HTLs, followed by deposition of PCBM [60] solution and Ag layer via vacuum evaporation.
5:Data Analysis Methods:
The conductivity was calculated from J-V curves. The carrier concentration and mobility were obtained from Hall test. The work functions were measured by ultraviolet photoelectron spectroscopy (UPS). The photovoltaic parameters were obtained by measuring 20 devices.
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Lead (II) iodide
PbI2
Alfa Aesar
Used as a precursor in the preparation of the MAPbI3 perovskite precursor.
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Methylammonium iodide
MAI
Xi’an Polymer Light Technology Crop
Used as a precursor in the preparation of the MAPbI3 perovskite precursor.
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[6,6]-Phenyl-C61-butyric Acid Methyl Ester
PCBM [60]
Solenne.b.v. Crop
Used as an electron transport layer in the device fabrication.
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Nickel acetate tetrahydrate
Macklin
Used in the preparation of NiOx and RE:NiOx precursor solutions.
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N, N-Dimethylformamide
DMF
Aladdin
Used as a solvent in the preparation of the MAPbI3 perovskite precursor.
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Dimethyl sulfoxide
DMSO
Aladdin
Used as a solvent in the preparation of the MAPbI3 perovskite precursor.
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Ethanolamine
EA
Aladdin
Used in the preparation of NiOx and RE:NiOx precursor solutions.
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Anhydrous ethanol
Aladdin
Used as a solvent in the preparation of NiOx and RE:NiOx precursor solutions.
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