研究目的
Investigating the crystalline improvement of GaAs grown on metal (Ga or In) selenides films and the suppression of twin generation in GaAs by inserting (As-Ga-Se)-treated Ga2Se3/In2Se3 as buffers.
研究成果
The twin generation in GaAs can be suppressed by inserting (As-Ga-Se)-treated Ga2Se3/In2Se3 as buffers, achieving 1μm GaAs grown on Si (111) with twin ratios <2% with a proper growth temperature.
研究不足
The study does not clarify the mechanism by which the As-Ga-Se treatment on Ga2Se3 promotes GaAs growth with low-twin domains. Additionally, the use of strong etchant in conventional epitaxial lift-off (ELO) technology raises occupational hazards and operating budgets.
1：Experimental Design and Method Selection:
The study involves the growth of GaAs on Si (111) substrates using metal selenides films as buffers. The methodology includes molecular beam epitaxy (MBE) for deposition and various treatments to improve crystalline quality.
2：Sample Selection and Data Sources:
Si (111) 4o misoriented to the [11-2] direction substrates were used. The substrates were chemically cleaned and hydrogen-passivated before loading into the MBE chamber.
3：List of Experimental Equipment and Materials:
MBE chamber, scanning electron microscopy (SEM), Raman spectrum, and X-ray diffraction (XRD) pole figure at GaAs (331).
4：1).
Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: Layered In2Se3 was deposited at 450°C for 1 hour under VI/III of 140. Following growth of Ga2Se3 was performed at 550 oC for 15 minutes with VI/III of 150. Subsequent irradiation of As, Ga and Se was applied at 550 oC for 2 minutes.
5：Following growth of Ga2Se3 was performed at 550 oC for 15 minutes with VI/III of Subsequent irradiation of As, Ga and Se was applied at 550 oC for 2 minutes.
Data Analysis Methods:
5. Data Analysis Methods: The samples were characterized by SEM, Raman spectrum, and XRD pole figure at GaAs (331).
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
