研究目的
To investigate the specific irradiation damage of 1 MeV electron irradiation in GaInAsP lattice matched to InP for varying In and P contents and the reduction of irradiation damage during regeneration under typical satellite operating conditions for GEO missions.
研究成果
The study demonstrates that GaInAsP, especially with high InP-fractions, is a promising material for the integration in future radiation hard space solar cells. The irradiation induced defect recombination coefficient decreases with increasing InP-fraction after regeneration, indicating higher radiation hardness for materials with higher InP content.
研究不足
The study focuses on the general investigation of the material properties of GaInAsP solar cells under electron irradiation and regeneration conditions typical for GEO missions. The implementation of GaInAsP into multi-junction space solar cells is discussed elsewhere.
1：Experimental Design and Method Selection:
The study employs a simulation-based analysis to investigate the irradiation damage and regeneration properties of GaInAsP solar cells. The quantum efficiency and open-circuit voltage are fitted simultaneously before and after irradiation to detect induced changes in lifetime.
2：Sample Selection and Data Sources:
Three different GaInAsP solar cells with varying In and P contents were grown on InP substrates. The samples were irradiated with 1 MeV electrons at different fluences.
3：List of Experimental Equipment and Materials:
The solar cells were grown by MOVPE with a multi-wafer AIX2800G4-TM reactor. IV-measurements were conducted in a WaveLabs LED array sun simulator. EQE-measurements were conducted using the differential spectral responsivity method.
4：Experimental Procedures and Operational Workflow:
The solar cells were irradiated at room temperature under a He-atmosphere. The regeneration experiments were conducted under AM0 illumination at 60°C.
5：Data Analysis Methods:
Numerical device simulation of the solar cells was performed using TCAD Sentaurus to analyze the irradiation damage and determine the irradiation induced defect recombination coefficient.
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