1：Experimental Design and Method Selection

The methodology involved the fabrication of a photodetector based on a PEDOT:PSS/β-Ga2O3 p-n junction. The design rationale was to leverage the high crystal quality of β-Ga2O3 and the excellent conductive properties of PEDOT:PSS to achieve high responsivity and rejection ratio.

2：Sample Selection and Data Sources

Ga2O3 microwires were synthesized by a chemical vapor deposition (CVD) method. PEDOT:PSS solutions were used to form the p-type layer. The samples were characterized using various techniques including SEM, AFM, TEM, Raman spectroscopy, and FTIR spectroscopy.

3：List of Experimental Equipment and Materials

Field-emission scanning electron microscopy (Hitachi, S4800), AFM (Bruker Dimension Icon), TEM (Hitach H7650), Raman spectroscopy (Witec alpha 300), FTIR spectroscopy (Nicolet Impact 410 spectrometer), Xe lamp, monochromator, semiconductor characterization system (Keithley 4200 and 4200 remote preamps), femtosecond pulsed laser (266 nm), digital oscilloscope (Tektronix TBS 1102).

4：Experimental Procedures and Operational Workflow

The Ga2O3 microwires were synthesized and transferred to a quartz glass substrate. PEDOT:PSS was applied to form the p-n junction. The photodetector was constructed using Indium electrodes. The photoelectric performance was measured under various conditions.

5：Data Analysis Methods

The responsivity, detectivity, and rejection ratios were calculated from the measured photocurrent and dark current. The carrier density and depletion layer widths were estimated using theoretical models.