研究目的
Investigating the effect of Zn(C6F5)2 as a p-type dopant for P3HT in enhancing the performance of planar perovskite solar cells.
研究成果
The study demonstrates that Zn(C6F5)2 is an effective p-type dopant for P3HT in PSCs, significantly enhancing their performance without compromising stability. The optimal dopant concentration was found to be 0.025 mol%, leading to a PCE of 17.49%. This represents a novel approach to improving PSC efficiency and stability.
研究不足
The study is limited by the solubility of Zn(C6F5)2 in P3HT, which affects the doping efficiency and the performance of the PSCs. The negative impact of higher dopant concentrations on device performance was also noted.
1：Experimental Design and Method Selection:
The study involved the fabrication of perovskite solar cells (PSCs) with P3HT as the hole-transporting material (HTM) doped with Zn(C6F5)2 at various concentrations. The performance of these PSCs was evaluated based on their power conversion efficiency (PCE).
2：Sample Selection and Data Sources:
The perovskite material used was Cs
3：05(MA13FA87)95Pb(I87Br13)3, and the ETM was SnOList of Experimental Equipment and Materials:
The study utilized UV-vis absorption spectroscopy, atomic force microscopy (AFM), X-ray diffraction (XRD), and electrochemical impedance spectroscopy (EIS) for characterization.
4：Experimental Procedures and Operational Workflow:
The PSCs were fabricated with the configuration FTO/SnO2/perovskite/HTM/Au. The HTM layer was deposited using the spin-coating method.
5：Data Analysis Methods:
The hole mobility of the HTM films was measured using field-effect transistor (FET) and space-charge-limited current (SCLC) methods. The photovoltaic performance was evaluated under 1 Sun illumination.
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