研究目的
To investigate the electrical properties and reliability of GaN-based Micro-LEDs under various conditions, including long-aging, high-temperature, and high-humidity environments, to optimize device design and performance.
研究成果
The study demonstrated that GaN-based Micro-LEDs exhibit high performance and reliability under extreme conditions, with optimal performance observed in bottom emitting square-shaped devices. The devices maintained stable operation over long aging periods and under high-temperature and high-humidity conditions, making them suitable for various applications, including displays and sensors. Future work should focus on further optimizing heat dissipation and exploring other substrate materials.
研究不足
The study focuses on GaN-based Micro-LEDs on sapphire substrates, and the findings may not be directly applicable to devices on other substrates or with different materials. The reliability tests were conducted under specific conditions, and further optimization may be required for other extreme environments.
1：Experimental Design and Method Selection:
Micro-LEDs were fabricated on sapphire substrates with varying sizes and structures to investigate size and structure-dependent effects. The devices were tested under extreme conditions to evaluate reliability.
2：Sample Selection and Data Sources:
Commercially available LED wafers were used. The composition of the epitaxial wafer was analyzed using a time-of-flight secondary ion mass spectrometer (TOF-SIMS).
3：List of Experimental Equipment and Materials:
Equipment included a GaN etcher, Plasma Enhanced Chemical Vapor Deposition (PECVD) for SiO2 growth, and photolithography tools. Materials included Ni/Au for the current spreading layer and Ti/Al/Ni/Au for electrodes.
4：Experimental Procedures and Operational Workflow:
The fabrication process involved mesa structure creation, surface treatment, current spreading layer evaporation, and electrode formation. Devices were then tested under various environmental conditions.
5：Data Analysis Methods:
Electrical characteristics (I-V, J-V) were analyzed, and reliability was assessed based on forward voltage, forward current, slope, and leakage current under different conditions.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
