1：Experimental Design and Method Selection:

Vertically aligned ZnO nanowires were synthesized by a wet chemical route on FTO-coated glass substrates with a pre-deposited nanocrystalline ZnO seed layer. Al doping was achieved by e-beam evaporation of thin Al layers onto ZnO nanowire films followed by rapid thermal annealing.

2：Sample Selection and Data Sources:

FTO-coated glass and quartz substrates were used for the deposition of ZnO nanowires. Al doping concentrations were varied by depositing Al layers of different thicknesses (3 nm, 6 nm, and 10 nm).

3：List of Experimental Equipment and Materials:

Equipment included a Quanta 250 FEG SEM system, PANalytical X’Pert PRO X-ray diffractometer, Perkin-Elmer Lambda 750 UV–Vis–NIR spectrophotometer, and a Keithley 2450 source meter attached to a solar simulator. Materials included zinc acetate, isopropyl alcohol, diethanolamine, zinc nitrate, sodium hydroxide, N3 dye, and iodide/tri-iodide solution.

4：Experimental Procedures and Operational Workflow:

The process involved cleaning substrates, depositing a ZnO seed layer, growing ZnO nanowires, depositing Al layers, annealing, dye loading, and assembling the DSSC. Electrical characterization was performed under standard test conditions.

5：Data Analysis Methods:

Optical transmittance spectra were used to calculate band gaps. J–V characteristics were analyzed to determine short-circuit current, open-circuit voltage, fill factor, and power conversion efficiency.