研究目的
Investigating the performance enhancement of all-solution processed inverted quantum dot light emitting diodes (QLEDs) through the introduction of dually-doped PEDOT:PSS hole-injection layer and PEI interfacial layer.
研究成果
The introduction of dually-doped PEDOT:PSS and PEI interfacial layer significantly enhances the performance of all-solution processed inverted QLEDs, achieving record efficiencies and luminance. The PEI layer reduces the hole-injection barrier and passivates QD surface defects, leading to improved device performance and longevity.
研究不足
The study focuses on the performance of QLEDs with specific materials and structures, and the scalability and long-term stability under various environmental conditions were not extensively explored.
1：Experimental Design and Method Selection:
The study involved the fabrication of all-solution processed inverted QLEDs with dually-doped PEDOT:PSS as the hole-injection layer and PEI as the interfacial layer between PVK and QD layers.
2：Sample Selection and Data Sources:
RGB-QDs with CdSe/ZnS core/shell structure were used as the emission layer.
3：List of Experimental Equipment and Materials:
Instruments included a Tencor Alpha-step 500 Surface Profilometer, ellipsometer SE-VM, fluorescence spectrofluorometer, Keithley 236 source meter, silicon photodiode, atomic force microscopy, electroluminescence spectrometer, and scanning transmission electron microscope.
4：Experimental Procedures and Operational Workflow:
The fabrication process involved spin-coating of ZnO, QDs, PVK, PEI, and PEDOT:PSS layers, followed by annealing at specified temperatures.
5：Data Analysis Methods:
Performance metrics such as current efficiency, EQE, and luminance were measured and analyzed.
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