研究目的
Investigating the potential and stability of perovskite(MaPbI3) as the hole-selective contact materials for silicon solar cells.
研究成果
The solar cell with the perovskite(MaPbI3) hole selective layer exhibits better performance than the reference counterpart, with slight increases in Jsc and Voc. Future work will focus on improving the film formation on the polished surface and engineering the composition of PbBr2 and PbI2.
研究不足
The study is still in process, with future work needed to tune the composition of PbBr2 and PbI2 to modify the work function and enlarge the hole selectivity.
1：Experimental Design and Method Selection:
The study employs a conventional n+/p silicon solar cell structure to investigate the use of perovskite(MaPbI3) as hole-selective contact materials.
2：Sample Selection and Data Sources:
n-type Si (100) wafers with resistivity of 1-10 Ω cm and thickness of 200 μm are used.
3：List of Experimental Equipment and Materials:
KOH for etching, POCL3 for doping, HF/H2O2 mixed solution for surface etching, and MAPBI3 solution for spin-coating.
4：Experimental Procedures and Operational Workflow:
The process includes cleaning, etching, doping, spin-coating perovskite, and evaporating silver electrodes.
5：Data Analysis Methods:
The performance is evaluated based on short-circuit current density (Jsc), open-circuit voltage (Voc), and power conversion efficiency (PCE).
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