研究目的
Investigating the effect of an ultra-thin Al2O3 layer as interface passivation strategy for the improvement of the performance of Cu2ZnSnS4/CdS based solar cells.
研究成果
The study demonstrated that thermally evaporated Al2O3 ultra-thin layers can effectively passivate the CZTS/CdS interface, leading to an enhancement in Voc and FF of the solar cell devices. The chemical passivation effect was suggested as the dominant mechanism. The methodology presents a simple approach to improving kesterite technology.
研究不足
The study is limited by the potential presence of secondary phases in the CZTS films, which could affect the solar cell performance. The thickness of the Al2O3 layer is also a critical factor, with very thin layers required to allow electron tunneling.
1：Experimental Design and Method Selection:
The study involved the deposition of an ultra-thin Al2O3 layer by thermal evaporation at the CZTS/CdS interface to improve the properties of the p-n junction.
2：Sample Selection and Data Sources:
CZTS thin films were grown onto Mo coated SLG glass by a sequential process. The samples were characterized by X-ray fluorescence, Raman spectroscopy, XRD, SEM, and J-V measurements.
3：List of Experimental Equipment and Materials:
Equipment included a DC magnetron sputtering system (Alliance CT100), a tubular furnace for sulfurization, a thermal evaporation system (Univex 250), and a solar simulator (Sun 3000 class AAA Abet Technologies). Materials included Cu, Sn, Zn elemental targets, Al2O3, and CdS.
4：Experimental Procedures and Operational Workflow:
The process involved the deposition of metallic films, sulfurization, etching with KCN, deposition of Al2O3 and CdS layers, and completion of the devices with i-ZnO/ITO layers.
5：Data Analysis Methods:
The analysis included the use of Sites' method for diode parameters calculation, EQE measurements, and bandgap estimation from Tauc plots.
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