研究目的
Investigating the equivalent circuit parameters of hybrid quantum-dot (QD) solar cells consisting of InAs/GaAs and GaSb/GaAs QDs to understand their performance and limitations.
研究成果
The study concludes that the hybrid QD solar cells can be best represented by the Rs & Rsh model, indicating the importance of considering both series and shunt resistances. The diode ideality factor of 2 suggests dominant recombination current. The performance deteriorates with an increase in the stacking number of QD layers, likely due to excessive thickness or defects.
研究不足
The performance of the solar cells is limited by the excessive total QD layer thickness or the presence of dislocation defects in the samples with increased stacking number.
1：Experimental Design and Method Selection:
The study involves fabricating hybrid QD solar cell samples by stacking one pair and three pairs of InAs/GaAs and GaSb/GaAs QD layers. Four equivalent circuit models (ideal, Rs, Rsh, and Rs & Rsh) are applied to fit the experimentally obtained current-voltage characteristics.
2：Sample Selection and Data Sources:
The samples are fabricated using molecular beam epitaxy (MBE) and characterized by their current-voltage characteristics.
3：List of Experimental Equipment and Materials:
Solid-source MBE equipped with Sb-valued cracker cell, p-GaAs substrate, AuGe/Ni and AuZn for contacts.
4：Experimental Procedures and Operational Workflow:
The samples are grown by MBE, followed by the fabrication of front and back contacts. Current-voltage characteristics are measured and fitted with the four equivalent circuit models.
5：Data Analysis Methods:
The fitting of current-voltage characteristics is done using MATLAB optimization toolbox with lsqcurvefit function, based on trust region reflective and Levenberg-Marquardt algorithms.
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